THE EFFECT OF SURFACE CLEANING AND REMOVING OF ORGANIC CONTAMINANTS FROM SILICON SUBSTRATES AND ITO GLASS BY ATMOSPHERIC PRESSURE NON-THERMAL PLASMA
| Autoři | |
|---|---|
| Rok publikování | 2012 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | CHEMICKÉ LISTY |
| Fakulta / Pracoviště MU | |
| Citace | |
| Obor | Fyzika plazmatu a výboje v plynech |
| Klíčová slova | DCSBD; silicon substrates; ITO glass;cleaning; organic contaminants |
| Popis | Plasma generated by DCSBD was investigated for cleaning and removing of organic contaminants from semiconductor materials. ITO glass used in photovoltaics and three types of most often used silicon surfaces in semiconductor industry – precleaned silicon, thermally oxidized silicon and H-terminated silicon was studied. The changes in chemical bonds on silicon surfaces were investigated by FTIR. Removing of IPA from silicon substrates was observed by XPS measurements. Effectivity of DCSBD as cleaning agent in comparison with isopropylacohol was investigated on ITO glass samples by XPS measurement. |
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