Study of amorphous thin films of Ge-As-Se system using laser desorption ionisation time-of-flight mass spectrometry
| Autoři | |
|---|---|
| Rok publikování | 2014 |
| Druh | Konferenční abstrakty |
| Fakulta / Pracoviště MU | |
| Citace | |
| Popis | Chalcogenide amorphous thin films represent one of the important materials with extensive applications. High refractive indices, good transparency in the IR spectral region, and photoinduced changes of the optical properties can be achieved and used for integrated optical devices, fully optical signal processing, optical circuits and, eventually for optical computing. The Ge-As-Se system belongs to group of glasses with large glass-forming region as well as tuning their photosensitivity/photostability. Laser desorption ionization (LDI) time-of-flight mass spectrometry (TOF MS) was proved to be highly useful for solid materials analysis, cf. for example. LDI TOF MS was applied here to analyze manufactured Ge-As-Se amorphous thin films fabricated by pulsed laser deposition technique. Mass spectra of the films are quite complex with severe clusters overlap. Stoichiometry of the GemAsnSeo clusters was determined via analysis of isotopic envelopes and computer modeling. Severe overlap of partially hydrogenated and other species was observed. Clusters identified possess to a certain extend part of the original chalcogenide films chemical structure and thus useful information about the solid thin films is obtained. |
| Související projekty: |