Properties of atmospheric pressure plasma oxidized layers on silicon wafers

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Publikace nespadá pod Filozofickou fakultu, ale pod Přírodovědeckou fakultu. Oficiální stránka publikace je na webu muni.cz.
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SKÁCELOVÁ Dana SLÁDEK Petr SŤAHEL Pavel PAWERA Lukáš HANIČINEC Martin MEISCHNER Jürgen ČERNÁK Mirko

Rok publikování 2015
Druh Článek v odborném periodiku
Časopis / Zdroj Open Chemistry
Fakulta / Pracoviště MU

Přírodovědecká fakulta

Citace
Doi http://dx.doi.org/10.1515/chem-2015-0047
Obor Fyzika plazmatu a výboje v plynech
Klíčová slova Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD
Popis In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
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