Polarization anisotropy of the emission from type-II quantum dots
| Autoři | |
|---|---|
| Rok publikování | 2015 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Physical Review B |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.241302 |
| Doi | http://dx.doi.org/10.1103/PhysRevB.92.241302 |
| Obor | Fyzika pevných látek a magnetismus |
| Klíčová slova | quantum dots; type-II bandalignment; photoluminescence; polarization |
| Popis | We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the (k) over right arrow . (p) over right arrow framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given. |
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