Modeling electronic and optical properties of III–V quantum dots—selected recent developments
| Autoři | |
|---|---|
| Rok publikování | 2022 |
| Druh | Článek v odborném periodiku |
| Časopis / Zdroj | Light: Science & Applications |
| Fakulta / Pracoviště MU | |
| Citace | |
| www | https://www.nature.com/articles/s41377-021-00700-9 |
| Doi | http://dx.doi.org/10.1038/s41377-021-00700-9 |
| Klíčová slova | quantum dot; single-particle theory; k.p method; empirical tight binding |
| Popis | Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer ?QDs and In1-xGax AsySb1-y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing. |
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