Oxidation of Silicon Surface by DCSBD

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Authors

SKÁCELOVÁ Dana HANIČINEC Martin SŤAHEL Pavel ČERNÁK Mirko

Year of publication 2012
Type Article in Proceedings
Conference NANOCON 2012, 4th INTERNATIONAL CONFERENCE
MU Faculty or unit

Faculty of Science

Citation
Web http://www.nanocon.eu/files/proceedings/04/reports/772.pdf
Field Plasma physics
Keywords Coplanar DBD; silicon dioxide; oxidation; atmospheric pressure plasma
Description In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surface properties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could represent new alternative of a low cost and fast oxidation process.
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