Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure

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Authors	SCHÄFER Jan HNILICA Jaroslav ŠPERKA Jiří QUADE Antje KUDRLE Vít FOEST Rüdiger VODÁK Jiří ZAJÍČKOVÁ Lenka
Year of publication	2016
Type	Article in Periodical
Magazine / Source	Surface and Coatings Technology
MU Faculty or unit	Faculty of Science
Citation
Doi	http://dx.doi.org/10.1016/j.surfcoat.2015.09.047
Field	Plasma physics
Keywords	Tetrakis(trimethylsilyloxy)silane; Tetrakis(trimethylsiloxy)silane; Plasma jet; Silicon dioxide
Attached files	1-s2.0-S0257897215302851-main.pdf
Description	We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a radiofrequency and a microwave plasma jets operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
Related projects:	CEPLANT - Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy CEITEC - Central European Institute of Technology Research center of surface treatment Rozvoj centra pro nízkonákladové plazmové a nanotechnologické povrchové úpravy