Strain relaxation in Ge microcrystals studied by high-resolution X-ray diffraction

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Authors

ROZBOŘIL Jakub MEDUŇA Mojmír FALUB Claudiu Valentin ISA Fabio VON KÄNEL Hans

Year of publication 2016
Type Article in Periodical
Magazine / Source PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
MU Faculty or unit

Central European Institute of Technology

Citation
Web http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532643/abstract
Doi http://dx.doi.org/10.1002/pssa.201532643
Field Solid matter physics and magnetism
Keywords crystal defects; Ge microcrystals; patterned Si substrate; X-ray diffraction
Description Deposition on patterned substrates is a promising method for obtaining high quality, strain and defect free heteroepitaxial layers. In this paper we investigate the crystalline structure of quasi-continuous Ge layers consisting of closely spaced microcrystals on a Si substrate patterned in the form of a regular net of lithographically defined squared based pillars. Lattice parameters, strain and degree of relaxation of the Ge microcrystals are measured by standard high-resolution X-ray diffraction using reciprocal space mapping. In particular, we focus on the impact of Si pillar size and spacing on the Ge crystal quality by analyzing how the bending of crystal lattice planes caused by thermal stress relaxation and random crystal tilts affect the width of the diffraction peaks.
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