Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

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Authors	MEDUŇA Mojmír KREILIGER Thomas PRIETO Ivan MAUCERI Marco PUGLISI Marco MANCARELLA Fulvio LA VIA Francesco CRIPPA Danilo MIGLIO Leo VON KÄNEL Hans
Year of publication	2016
Type	Article in Periodical
Magazine / Source	Materials Science Forum
MU Faculty or unit	Central European Institute of Technology
Citation
Doi	http://dx.doi.org/10.4028/www.scientific.net/MSF.858.147
Field	Solid matter physics and magnetism
Keywords	High-resolution X-ray diffraction; high-resolution scanning electron microscopy; electron backscatter diffraction; stacking faults; patterned Si substrates; heteroepitaxy; 3C-SiC
Description	The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction.
Related projects:	CEITEC - Central European Institute of Technology Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery