Laser desorption ionisation time-of-flight mass spectrometry of glasses and amorphous films from Ge-As-Se system

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Authors

ŠÚTOROVÁ Katarína PROKEŠ Lubomír NAZABAL Virginie BAUDET Emeline HAVEL Josef NĚMEC Petr

Year of publication 2016
Type Article in Periodical
Magazine / Source JOURNAL OF THE AMERICAN CERAMIC SOCIETY
MU Faculty or unit

Faculty of Science

Citation
Web http://onlinelibrary.wiley.com/doi/10.1111/jace.14366/full
Doi http://dx.doi.org/10.1111/jace.14366
Field Analytic chemistry
Keywords LDI TOFMS; chalcogenide glasses; structure; clusters; germanium; arsenic; selenium
Description Laser Desorption Ionization Time-of-Flight Mass Spectrometry was exploited for the characterization of Ge-As-Se chalcogenide glasses and corresponding thin films fabricated by using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters’ stoichiometry. The clusters observed were Asb+ (b = 1-3), Se2-, binary AsbSe+ (b = 1-3), AsbSec- (b = 1-3,c = 1-4), Ge2Sec- (c = 2-3), As3Se2+, Ge2Asb- (b = 2-3), Ge3Asb- (b = 1-2), Ge3Se4-, As5Sec- (c = 4-5), GeAsSe4-, GeaAsSe5- (a = 1-4), GeAs2Se3-, GeAs3Se2-, Ge2As2Se2-, Ge2AsSec- (c = 6-7), and GeAs3Sec- (c = 5-6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.
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