Characterization of Ar/N-2/H-2 middle-pressure RF discharge and application of the afterglow region for nitridation of GaAs
| Authors | |
|---|---|
| Year of publication | 2017 |
| Type | Article in Periodical |
| Magazine / Source | Journal of Physics D: Applied Physics |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.1088/1361-6463/aa9635 |
| Field | Plasma physics |
| Keywords | RF discharge; plasma characteristics; GaAs nitridation |
| Description | This work characterizes the production and destruction of nitrogen and hydrogen atoms in RF capacitively coupled middle-pressure discharge in argon/nitrogen/hydrogen mixtures. Input power, electron concentration, electric field strength and mean electron energy were determined on the basis of electrical measurements. Gas temperature and concentration of Ar atoms in 1s states were determined from spectral measurements. On the basis of experimentally determined plasma characteristics, main production and loss mechanisms of H and N atoms were discussed. The plasma produced radicals were applied for the nitridation and oxide reduction of gallium arsenide in the afterglow region of discharge. After plasma treatment the GaAs samples were analyzed using x-ray photoelectron spectroscopy (XPS) technique. Successful nitridation of GaAs sample was obtained in the case of Ar/5% N-2 discharge. In this gas mixture the N atoms were generated via dissociative recombination of N-2(+) created by charge transfer from Ar+. The treatment in Ar/5% N-2/1% H-2 mixture resulted in the reduction of oxide signals in the XPS spectra. Negligible formation of GaN in the latter mixture was connected with reduced concentration of N atoms, which was, in turn, due to less efficient mechanism of N atom production (electron impact dissociation of N-2 molecules) and additional loss channel in reaction with H-2. |
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