X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers

• Authors: MEDUŇA Mojmír; KREILIGER Thomas; MAUCERI Marco; PUGLISI Marco; MANCARELLA Fulvio; LA VIA Francesco; CRIPPA Danilo; MIGLIO Leo; VON KÄNEL Hans
• Year of publication: 2019
• Type: Article in Periodical
• Magazine / Source: Journal of Crystal Growth
• MU Faculty or unit: Faculty of Science
• Web: Full Text
• Doi: http://dx.doi.org/10.1016/j.jcrysgro.2018.10.046
• Keywords: Semiconducting silicon compounds; Carbides; High resolution X-ray diffraction; Planar defects; Low dimensional structures
• Description: We present an investigation of the structural quality of arrays of 3C-SiC micropillars and microridges grown epitaxially on deeply etched Si(0 0 1) substrates offcut towards [1 1 0].

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