Optical characterization of DLC:Si films prepared by PECVD

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Authors

FRANTA Daniel BURŠÍKOVÁ Vilma ZAJÍČKOVÁ Lenka

Year of publication 2001
Type Article in Proceedings
Conference Proceedings of 13th Symposium on Application of Plasma Processes
MU Faculty or unit

Faculty of Science

Citation
Web http://hydra.physics.muni.cz/~franta/bib/SAPP13_87.html
Field Plasma physics
Description Multi-sample modification of variable angle of incidence spectroscopic ellipsometry (VASE) was used to characterize silicon doped diamond like carbon (DLC:Si) films prepared by plasma enhanced chemical vapor deposition (PECVD). These films were prepared on wafers of silicon single crystal in the planar capacitively coupled RF reactor. The gas feed for deposition was a mixture of methane (CH4), hexamethyldisiloxane (HMDSO) and argon (Ar).
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