Optical characterization of DLC:Si films prepared by PECVD

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Authors	FRANTA Daniel BURŠÍKOVÁ Vilma ZAJÍČKOVÁ Lenka
Year of publication	2001
Type	Article in Proceedings
Conference	Proceedings of 13th Symposium on Application of Plasma Processes
MU Faculty or unit	Faculty of Science
Citation
Web	http://hydra.physics.muni.cz/~franta/bib/SAPP13_87.html
Field	Plasma physics
Description	Multi-sample modification of variable angle of incidence spectroscopic ellipsometry (VASE) was used to characterize silicon doped diamond like carbon (DLC:Si) films prepared by plasma enhanced chemical vapor deposition (PECVD). These films were prepared on wafers of silicon single crystal in the planar capacitively coupled RF reactor. The gas feed for deposition was a mixture of methane (CH4), hexamethyldisiloxane (HMDSO) and argon (Ar).
Related projects:	Plasmachemical depositions and plasmachemical treatment of surfaces of solid state substrate Plasma deposition of protective coatings: characterisation of prepared films and diagnostics of reactive plasmas used Characterization of multilayer systems with randomly rough boundaries by means of optical and X - ray methods Study of plasmachemical reactions in non-isothermic low pressure plasma and its interaction with the surface of solid substrates