GID study of strains in Si due to patterned SiO2

Warning

This publication doesn't include Faculty of Arts. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors	DANIEL A. HOLÝ Václav BAUER G.
Year of publication	2001
Type	Article in Periodical
Magazine / Source	J. Phys.D.: Appl. Phys.
MU Faculty or unit	Faculty of Science
Citation
Field	Solid matter physics and magnetism
Description	GID study of strains in Si due to patterned SiO2
Related projects:	Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices