Analysis of vacancy and interstitial nucleation kinetics in Si wafers during rapid thermal annealing
| Authors | |
|---|---|
| Year of publication | 2009 |
| Type | Article in Periodical |
| Magazine / Source | J.Phys.: Condens. Matter |
| MU Faculty or unit | |
| Citation | |
| Field | Solid matter physics and magnetism |
| Keywords | Silicon; vacancies; Interstitials; nucleation |
| Description | The kinetics of the vacancy and self interstitial processes in Si wafers are studied in this paper. Detailed insight into nucleation processes, out diffusion and vacancy interstitial recombination during the RTA leads to a new model of interaction between vacancies and oxygen. |
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