Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation
| Authors | |
|---|---|
| Year of publication | 2011 |
| Type | Article in Periodical |
| Magazine / Source | physica status solidi (c) |
| MU Faculty or unit | |
| Citation | KOMARNITSKYY, Volodymyr, Pavel HAZDRA and Vilma BURŠÍKOVÁ. Interaction of hydrogen and deuterium with radiation defects introduced in silicon by high-energy helium irradiation. physica status solidi (c). Weinheim, Německo: Wiley-VCH Verlag, 2011, vol. 8, No 3, p. 948-951. ISSN 1862-6351. Available from: https://dx.doi.org/10.1002/pssc.201000301. |
| Doi | http://dx.doi.org/10.1002/pssc.201000301 |
| Field | Plasma physics |
| Keywords | Deuterium; Hydrogen; Radiation defects; Silicon |
| Description | Interaction of hydrogen and deuterium with radiation defects introduced by irradiation with high-energy alphas was investigated in the low-doped float zone and Czochralski silicon forming the base of p+nn+ diodes. To create localized defect layer, diodes were first irradiated with 2.4 MeV alphas to a fluence of 1x1010 cm-2. Then, hydrogen or deuterium was introduced by rf plasma treatment at 250 C and diodes were isochronally annealed at temperatures ranging from 100 to 400 C. Reactions of hydrogen and deuterium with radiation defects were monitored by deep-level transient spectroscopy. Results show that hydrogen rf plasma effectively neutralizes majority of vacancy related defects created by alpha-particle irradiation in both materials. In contrast with it, neutralization by deuterium plasma is substantially weaker. Disappearing of vacancy-related defect levels due to hydrogen (deuterium) is accompanied by introduction of two dominant deep levels at EC-0.309 eV and EC-0.365 eV. While hydrogenation significantly accelerates annealing of radiation defects, deuteration has weaker effect and gives rise to new defect levels during annealing. |
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