PECVD of nanostructured SiO2 in a modulated microwave plasma jet at atmospheric pressure

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Authors	HNILICA Jaroslav SCHÄFER Jan FOEST Rüdiger ZAJÍČKOVÁ Lenka KUDRLE Vít
Year of publication	2013
Type	Article in Periodical
Magazine / Source	J. Phys. D: Appl. Phys.
MU Faculty or unit	Faculty of Science
Citation
Web	http://iopscience.iop.org/0022-3727/46/33/335202/
Doi	http://dx.doi.org/10.1088/0022-3727/46/33/335202
Field	Plasma physics
Keywords	PECVD; modulated; microwave; plasma jet; atmospheric pressure
Attached files	ZVV_2013_1118531_PECVD.pdf
Description	We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a microwave plasma jet operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
Related projects:	CEPLANT - Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy CEITEC - Central European Institute of Technology Samoorganizace a procesy strukturalizace v plazmochemické depozici tenkých vrstev