Advanced modeling for optical characterization of amorphous hydrogenated silicon films

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Authors	FRANTA Daniel NEČAS David ZAJÍČKOVÁ Lenka OHLÍDAL Ivan STUCHLÍK Jiří
Year of publication	2013
Type	Article in Periodical
Magazine / Source	Thin Solid Films
MU Faculty or unit	Central European Institute of Technology
Citation
Web	http://dx.doi.org/10.1016/j.tsf.2013.04.129
Doi	http://dx.doi.org/10.1016/j.tsf.2013.04.129
Field	Solid matter physics and magnetism
Keywords	Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule
Attached files	TSF541_12.pdf ZVV_2013_1161986.pdf
Description	Amorphous hydrogenated silicon (a-Si:H) films deposited on glass and crystalline silicon substrates are analyzed using a multi-sample method combining ellipsometry and spectrophotometry in a spectral range of 0.046–8.9 eV, utilizing an analytical dispersion model based on parametrization of joint density of states and application of sum rule. This model includes all absorption processes from phonon absorption to core electron excitations. It is shown that if films deposited on both substrates are characterized together it is possible to study both phonon absorption and weak absorption processes below the band gap, i.e. the Urbach tail and absorption on localized states.
Related projects:	CEPLANT - Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy CEITEC - Central European Institute of Technology