Laser desorption time-of-flight mass spectrometry of atomic switch memory Ge2Sb2Te5 bulk materials and its thin films
| Authors | |
|---|---|
| Year of publication | 2014 |
| Type | Article in Periodical |
| Magazine / Source | Rapid Communications in Mass Spectrometry |
| MU Faculty or unit | |
| Citation | |
| Doi | http://dx.doi.org/10.1002/rcm.6833 |
| Field | Analytic chemistry |
| Keywords | atomic switch memory thin films pulsed laser deposition laser desorption time of flight mass spectrometry clusters solid phase structural fragments phase change materials Ge2Sb2Te5 (GST) laser ablation |
| Description | The report elucidates the stoichiometry of GemSbnTep clusters formed in plasma when bulk or nano-layers of GST material are ablated. The clusters stoichiometry were identified using isotopic envelope analysis. The singly negatively or positively charged clusters identified from the LDI of GST were Ge, Ge2, GeTe, Ge2Te, Ten (n=1–3), GeTe2, Ge2Te2, GeTe3, SbTe2, Sb2Te, GeSbTe2, Sb3Te and the low abundance ternary GeSbTe3, while the LDI of germanium telluride yielded GemTen + clusters (m=1–3, n=1–3). Several minor Ge-H clusters were also observed for pure germanium and for germanium telluride. Sbn clusters (n=1–3) and the formation of binary TeSb, TeSb2 and TeSb3 clusters were detected when Sb2Te3 was examined. The clusters were found to be fragments of the original structure. |
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