Plasma Enhanced CVD of DLC:Si(O) Films from Methane/Hexamethyldisiloxane Feeds
Authors | |
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Year of publication | 2001 |
Type | Article in Proceedings |
Conference | Proceedings of 15th International Symposium on Plasma Chemistry |
MU Faculty or unit | |
Citation | |
Field | Plasma physics |
Keywords | PECVD; Diamod-like carbon; Hardness; Optical emission spectroscopy ; ion density; |
Description | Low pressure deposition of hard carbon films with addition of silicon and oxide was carried out in the mixture of methane and hexamethyldisiloxane (HMDSO). Film properties like deposition rate, hardness and optical constants depended strongly on tbe HMDSO to methane ratio. Moreover, the self bias voltage at the powered electrode, on which the substrates were placed, depended on this ratio too. Therefore, the plasma parameters were studied by OES and capacitavely coupled planar ion flux probe. It was found, that the temperatures as well as positive ion current density depended on the HMDSO to methane flow rate ratio but not on the self bias voltage that was independently changed with an external dc voltage supply. |
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