Effect of Structural Imperfections on the Characteristics of YSZ Dielectric Layers Grown by E-beam Evaporation fron the Crystalline Taggets

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Authors	HARTMANNOVÁ Mária JERGEL Martin NAVRÁTIL Vladislav NAVRÁTIL Karel GMUCOVÁ Katarina GANDARILLA F.C. ZEMEK Jan CHROMIK Stefan KUNDRACIK Frantiaek
Year of publication	2005
Type	Article in Proceedings
Conference	Acta Physica Slovaca
MU Faculty or unit	Faculty of Education
Citation
Field	Solid matter physics and magnetism
Keywords	Yttria stabilized zirconia; thin films; electrical conductivity; microhardness; refractive index; relative permitivity
Description	The films under study were deposited by e-beam evaporation on yttria-stabilized zirconia crystalline samples on the n-doped Si (111) substrate at 750 C. The electrical conductivity and the activation energy as the function of the yttria content indicated the influence of isolated oxygen ion vacancies as well as the associated point defects.The measured microhardness data as well as a high refractive index render from YSZ a promising material for protective coatings and optical applications respectively.
Related projects:	Physical properties of new materials and layered structures Study of plasmachemical reactions in non-isothermic low pressure plasma and its interaction with the surface of solid substrates